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MX29LV640T/B
FEATURES
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
SOFTWARE FEATURES * Support Common Flash Interface (CFI) - Flash device parameters stored on the device and provide the host system to access. * Erase Suspend/ Erase Resume - Suspends sector erase operation to read data from or program data to another sector which is not being erased * Status Reply - Data polling & Toggle bits provide detection of program and erase operation completion
GENERAL FEATURES * Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations * 8,388,608 x 8 / 4,194,304 x 16 switchable * Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 * Sector Protection/Chip Unprotect - Provides sector group protect function to prevent program or erase operation in the protected sector group - Provides chip unprotect function to allow code changes - Provides temporary sector group unprotect function for code changes in previously protected sector groups * Secured Silicon Sector - Provides a 128-word area for code or data that can be permanently protected. - Once this sector is protected, it is prohibited to program or erase within the sector again. * Latch-up protected to 250mA from -1V to Vcc + 1V * Low Vcc write inhibit is equal to or less than 1.5V * Compatible with JEDEC standard - Pin-out and software compatible to single power supply Flash PERFORMANCE * High Performance - Fast access time: 90/120ns - Fast program time: 11us/word, 45s/chip (typical) - Fast erase time: 0.9s/sector, 45s/chip (typical) * Low Power Consumption - Low active read current: 10mA (typical) at 5MHz - Low standby current: 0.2uA (typ.) * Minimum 100,000 erase/program cycle * 20-year data retention
HARDWARE FEATURES * Ready/Busy (RY/BY) Output - Provides a hardware method of detecting program and erase operation completion * Hardware Reset (RESET) Input - Provides a hardware method to reset the internal state machine to read mode * WP Pin - Write protect (WP) function allows protection of two outermost boot sectors, regardless of sector protect status PACKAGE * 48-pin TSOP * 63-ball CSP * 64-ball Easy BGA
GENERAL DESCRIPTION
The MX29LV640T/B is a 64-mega bit Flash memory organized as 8M bytes of 8 bits or 4M bytes of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV640T/B is packaged in 48-pin TSOP, 63ball CSP and 64-ball Easy BGA. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV640T/B offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV640T/B has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The
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MX29LV640T/B
MX29LV640T/B uses a command register to manage this functionality. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29LV640T/B uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V.
AUTOMATIC SECTOR ERASE
The MX29LV640T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. Sector erase modes allow sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the programming operation. Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE . MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV640T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC PROGRAMMING
The MX29LV640T/B is byte/word programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX29LV640T/B is less than 50 seconds.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm require the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 115 seconds. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device.
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MX29LV640T/B
PIN CONFIGURATION
48 TSOP
A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE RESET A21 WP RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0
MX29LV640T/B
63 Ball CSP (Top View, Ball Down)
12.0 mm
8
NC
NC
NC*
NC*
7
NC
NC
A13
A12
A14
A15
A16
BYTE
Q15/ A-1
GND
NC*
NC*
6
A9
A8
A10
A11
Q7
Q14
Q13
Q6
5
WE
RESET
A21
A19
Q5
Q12
VCC
Q4 11.0 mm
4
RY/BY
WP
A18
A20
Q2
Q10
Q11
Q3
3
A7
A17
A6
A5
Q0
Q8
Q9
Q1
2
NC*
A3
A4
A2
A1
A0
CE
OE
GND
NC*
NC*
1
NC*
NC*
NC*
NC*
A
B
C
D
E
F
G
H
J
K
L
M
* Ball are shorted together via the substrate but not connected to the die.
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MX29LV640T/B
64 Ball Easy BGA (Top View, Ball Down)
A8 NC A7 A13 A6 A9 A5 WE A4 RY/BY A3 A7 A2 A3 A1 NC B8 NC B7 A12 B6 A8 B5 RESET B4 WP B3 A17 B2 A4 B1 NC C8 NC C7 A14 C6 A10 C5 A21 C4 A18 C3 A6 C2 A2 C1 NC D8 NC D7 A15 D6 A11 D5 A19 D4 A20 D3 A5 D2 A1 D1 NC E8 GND E7 A16 E6 Q7 E5 Q5 E4 Q2 E3 Q0 E2 A0 E1 NC F8 NC F7 BYTE F6 Q14 F5 Q12 F4 Q10 F3 Q8 F2 CE F1 NC G8 NC G7 Q15 G6 Q13 G5 VCC G4 Q11 G3 Q9 G2 OE G1 NC H8 NC H7 GND H6 Q6 H5 Q4 10 mm H4 Q3 H3 Q1 H2 GND H1 NC
13mm
PIN DESCRIPTION
SYMBOL A0~A21 Q0~Q14 Q15/A-1 CE WE OE RESET WP RY/BY VCC GND NC PIN NAME Address Input Data Inputs/Outputs Q15(Word Mode)/LSB addr(Byte Mode) Chip Enable Input Write Enable Input Output Enable Input Hardware Reset Pin, Active Low Hardware Write Protect Read/Busy Output +3.0V single power supply Device Ground Pin Not Connected Internally
LOGIC SYMBOL
22 A0-A21 Q0-Q15 (A-1)
16 or 8
CE OE WE RESET WP RY/BY
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MX29LV640T/B
BLOCK DIAGRAM
CE OE WE WP BYTE RESET
WRITE CONTROL INPUT LOGIC HIGH VOLTAGE MACHINE (WSM) PROGRAM/ERASE STATE
X-DECODER
MX29LV640T/B FLASH ARRAY ARRAY
STATE REGISTER
ADDRESS LATCH A0-A21 AND BUFFER
SENSE AMPLIFIER
Y-DECODER
Y-PASS GATE
SOURCE HV COMMAND DATA DECODER
PGM DATA HV COMMAND DATA LATCH
PROGRAM DATA LATCH
Q0-Q15
I/O BUFFER
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MX29LV640T/B
MX29LV640T SECTOR GROUP ARCHITECTURE
Sector Group 1 1 1 1 2 2 2 2 3 3 3 3 4 4 4 4 5 5 5 5 6 6 6 6 7 7 7 7 8 8 8 8 9 9 9 9 10 10 10 10
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Sector Sector Address A21-A12 SA0 0000000xxx SA1 0000001xxx SA2 0000010xxx SA3 0000011xxx SA4 0000100xxx SA5 0000101xxx SA6 0000110xxx SA7 0000111xxx SA8 0001000xxx SA9 0001001xxx SA10 0001010xxx SA11 0001011xxx SA12 0001100xxx SA13 0001101xxx SA14 0001110xxx SA15 0001111xxx SA16 0010000xxx SA17 0010001xxx SA18 0010010xxx SA19 0010011xxx SA20 0010100xxx SA21 0010101xxx SA22 0010110xxx SA23 0010111xxx SA24 0011000xxx SA25 0011001xxx SA26 0011010xxx SA27 0011011xxx SA28 0011100xxx SA29 0011101xxx SA30 0011110xxx SA31 0011111xxx SA32 0100000xxx SA33 0100001xxx SA34 0100010xxx SA35 0100011xxx SA36 0100100xxx SA37 0100101xxx SA38 0100110xxx SA39 0100111xxx
Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32
(x8) Address Range 000000h-00FFFFh 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh 190000h-19FFFFh 1A0000h-1AFFFFh 1B0000h-1BFFFFh 1C0000h-1CFFFFh 1D0000h-1DFFFFh 1E0000h-1EFFFFh 1F0000h-1FFFFFh 200000h-20FFFFh 210000h-21FFFFh 220000h-22FFFFh 230000h-23FFFFh 240000h-24FFFFh 250000h-25FFFFh 260000h-26FFFFh 270000h-27FFFFh
(x16) Address Range 000000h-07FFFh 008000h-0FFFFh 010000h-17FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh 0F8000h-0FFFFFh 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh
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MX29LV640T/B
Sector Group 11 11 11 11 12 12 12 12 13 13 13 13 14 14 14 14 15 15 15 15 16 16 16 16 17 17 17 17 18 18 18 18 19 19 19 19 20 20 20 20 Sector Sector Address A21-A12 SA40 0101000xxx SA41 0101001xxx SA42 0101010xxx SA43 0101011xxx SA44 0101100xxx SA45 0101101xxx SA46 0101110xxx SA47 0101111xxx SA48 0110000xxx SA49 0110001xxx SA50 0110010xxx SA51 0110011xxx SA52 0110100xxx SA53 0110101xxx SA54 0110110xxx SA55 0110111xxx SA56 0111000xxx SA57 0111001xxx SA58 0111010xxx SA59 0111011xxx SA60 0111100xxx SA61 0111101xxx SA62 0111110xxx SA63 0111111xxx SA64 1000000xxx SA65 1000001xxx SA66 1000010xxx SA67 1000011xxx SA68 1000100xxx SA69 1000101xxx SA70 1000110xxx SA71 1000111xxx SA72 1001000xxx SA73 1001001xxx SA74 1001010xxx SA75 1001011xxx SA76 1001100xxx SA77 1001101xxx SA78 1001110xxx SA79 1001111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 280000h-28FFFFh 290000h-29FFFFh 2A0000h-2AFFFFh 2B0000h-2BFFFFh 2C0000h-2CFFFFh 2D0000h-2DFFFFh 2E0000h-2EFFFFh 2F0000h-2FFFFFh 300000h-30FFFFh 310000h-31FFFFh 320000h-32FFFFh 330000h-33FFFFh 340000h-34FFFFh 350000h-35FFFFh 360000h-36FFFFh 370000h-37FFFFh 380000h-38FFFFh 390000h-39FFFFh 3A0000h-3AFFFFh 3B0000h-3BFFFFh 3C0000h-3CFFFFh 3D0000h-3DFFFFh 3E0000h-3EFFFFh 3F0000h-3FFFFFh 400000h-40FFFFh 410000h-41FFFFh 420000h-42FFFFh 430000h-43FFFFh 440000h-44FFFFh 450000h-45FFFFh 460000h-46FFFFh 470000h-47FFFFh 480000h-48FFFFh 490000h-49FFFFh 4A0000h-4AFFFFh 4B0000h-4BFFFFh 4C0000h-4CFFFFh 4D0000h-4DFFFFh 4E0000h-4EFFFFh 4F0000h-4FFFFFh (x16) Address Range 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-147FFFh 168000h-14FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-247FFFh 268000h-24FFFFh 270000h-277FFFh 278000h-27FFFFh
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MX29LV640T/B
Sector Group 21 21 21 21 22 22 22 22 23 23 23 23 24 24 24 24 25 25 25 25 26 26 26 26 27 27 27 27 28 28 28 28 29 29 29 29 30 30 30 30 Sector Sector Address A21-A12 SA80 1010000xxx SA81 1010001xxx SA82 1010010xxx SA83 1010011xxx SA84 1010100xxx SA85 1010101xxx SA86 1010110xxx SA87 1010111xxx SA88 1011000xxx SA89 1011001xxx SA90 1011010xxx SA91 1011011xxx SA92 1011100xxx SA93 1011101xxx SA94 1011110xxx SA95 1011111xxx SA96 1100000xxx SA97 1100001xxx SA98 1100010xxx SA99 1100011xxx SA100 1100100xxx SA101 1100101xxx SA102 1100110xxx SA103 1100111xxx SA104 1101000xxx SA105 1101001xxx SA106 1101010xxx SA107 1101011xxx SA108 1101100xxx SA109 1101101xxx SA110 1101110xxx SA111 1101111xxx SA112 1110000xxx SA113 1110001xxx SA114 1110010xxx SA115 1110011xxx SA116 1110100xxx SA117 1110101xxx SA118 1110110xxx SA119 1110111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 500000h-50FFFFh 510000h-51FFFFh 520000h-52FFFFh 530000h-53FFFFh 540000h-54FFFFh 550000h-55FFFFh 560000h-56FFFFh 570000h-57FFFFh 580000h-58FFFFh 590000h-59FFFFh 5A0000h-5AFFFFh 5B0000h-5BFFFFh 5C0000h-5CFFFFh 5D0000h-5DFFFFh 5E0000h-5EFFFFh 5F0000h-5FFFFFh 600000h-60FFFFh 610000h-61FFFFh 620000h-62FFFFh 630000h-63FFFFh 640000h-64FFFFh 650000h-65FFFFh 660000h-66FFFFh 670000h-67FFFFh 680000h-68FFFFh 690000h-69FFFFh 6A0000h-6AFFFFh 6B0000h-6BFFFFh 6C0000h-6CFFFFh 6D0000h-6DFFFFh 6E0000h-6EFFFFh 6F0000h-6FFFFFh 700000h-70FFFFh 710000h-71FFFFh 720000h-72FFFFh 730000h-73FFFFh 740000h-74FFFFh 750000h-75FFFFh 760000h-76FFFFh 770000h-77FFFFh (x16) Address Range 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh 360000h-347FFFh 368000h-34FFFFh 370000h-377FFFh 378000h-37FFFFh 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh
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Sector Group 31 31 31 31 32 32 32 33 34 35 36 37 38 39 40 Sector Sector Address A21-A12 SA120 1111000xxx SA121 1111001xxx SA122 1111010xxx SA123 1111011xxx SA124 1111100xxx SA125 1111101xxx SA126 1111110xxx SA127 1111111000 SA128 1111111001 SA129 1111111010 SA130 1111111011 SA131 1111111100 SA132 1111111101 SA133 1111111110 SA134 1111111111 Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 (x8) Address Range 780000h-78FFFFh 790000h-79FFFFh 7A0000h-7AFFFFh 7B0000h-7BFFFFh 7C0000h-7CFFFFh 7D0000h-7DFFFFh 7E0000h-7EFFFFh 7F0000h-7F1FFFh 7F2000h-7F3FFFh 7F4000h-7F5FFFh 7F6000h-7F7FFFh 7F8000h-7F9FFFh 7FA000h-7FBFFFh 7FC000h-7FDFFFh 7FE000h-7FFFFFh (x16) Address Range 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3FFFFFh 3F9000h-3F9FFFh 3FA000h-3FAFFFh 3FB000h-3FBFFFh 3FC000h-3FCFFFh 3FD000h-3FDFFFh 3FE000h-3FEFFFh 3FF000h-3FFFFFh
Note:The address range is A21:A-1 in byte mode (BYTE=VIL) or A20:A0 in word mode (BYTE=VIH)
Top Boot Security Sector Addresses
Sector Address A21~A12 1111111111 Sector Size (bytes/words) 256/128 (x8) Address Range 7FFF00h-7FFFFFh (x16) Address Range 3FFF70h-3FFFFFh
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MX29LV640B SECTOR GROUP ARCHITECTURE
Sector Group 1 2 3 4 5 6 7 8 9 9 9 10 10 10 10 11 11 11 11 12 12 12 12 13 13 13 13 14 14 14 14 15 15 15 15 16 16 16 16 Sector Sector Address A21-A12 SA0 0000000000 SA1 0000000001 SA2 0000000010 SA3 0000000011 SA4 0000000100 SA5 0000000101 SA6 0000000110 SA7 0000000111 SA8 0000001xxx SA9 0000010xxx SA10 0000011xxx SA11 0000100xxx SA12 0000101xxx SA13 0000110xxx SA14 0000111xxx SA15 0001000xxx SA16 0001001xxx SA17 0001010xxx SA18 0001011xxx SA19 0001100xxx SA20 0001101xxx SA21 0001110xxx SA22 0001111xxx SA23 0010000xxx SA24 0010001xxx SA25 0010010xxx SA26 0010011xxx SA27 0010100xxx SA28 0010101xxx SA29 0010110xxx SA30 0010111xxx SA31 0011000xxx SA32 0011001xxx SA33 0011010xxx SA34 0011011xxx SA35 0011100xxx SA36 0011101xxx SA37 0011110xxx SA38 0011111xxx Sector Size (Kbytes/Kwords) 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 000000h-001FFFh 002000h-003FFFh 004000h-005FFFh 006000h-007FFFh 008000h-009FFFh 00A000h-00BFFFh 00C000h-00DFFFh 00E000h-00FFFFh 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh 190000h-19FFFFh 1A0000h-1AFFFFh 1B0000h-1BFFFFh 1C0000h-1CFFFFh 1D0000h-1DFFFFh 1E0000h-1EFFFFh 1F0000h-1FFFFFh (x16) Address Range 000000h-000FFFh 001000h-001FFFh 002000h-002FFFh 003000h-003FFFh 004000h-004FFFh 005000h-005FFFh 006000h-006FFFh 007000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh 0F8000h-0FFFFFh
P/N:PM0920
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MX29LV640T/B
Sector Group 17 17 17 17 18 18 18 18 19 19 19 19 20 20 20 20 21 21 21 21 22 22 22 22 23 23 23 23 24 24 24 24 25 25 25 25 26 26 26 26 Sector Sector Address A21-A12 SA39 0100000xxx SA40 0100001xxx SA41 0100010xxx SA42 0100011xxx SA43 0100100xxx SA44 0100101xxx SA45 0100110xxx SA46 0100111xxx SA47 0101000xxx SA48 0101001xxx SA49 0101010xxx SA50 0101011xxx SA51 0101100xxx SA52 0101101xxx SA53 0101110xxx SA54 0101111xxx SA55 0110000xxx SA56 0110001xxx SA57 0110010xxx SA58 0110011xxx SA59 0110100xxx SA60 0110101xxx SA61 0110110xxx SA62 0110111xxx SA63 0111000xxx SA64 0111001xxx SA65 0111010xxx SA66 0111011xxx SA67 0111100xxx SA68 0111101xxx SA69 0111110xxx SA70 0111111xxx SA71 1000000xxx SA72 1000001xxx SA73 1000010xxx SA74 1000011xxx SA75 1000100xxx SA76 1000101xxx SA77 1000110xxx SA78 1000111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 200000h-20FFFFh 210000h-21FFFFh 220000h-22FFFFh 230000h-23FFFFh 240000h-24FFFFh 250000h-25FFFFh 260000h-26FFFFh 270000h-27FFFFh 280000h-28FFFFh 290000h-29FFFFh 2A0000h-2AFFFFh 2B0000h-2BFFFFh 2C0000h-2CFFFFh 2D0000h-2DFFFFh 2E0000h-2EFFFFh 2F0000h-2FFFFFh 300000h-30FFFFh 310000h-31FFFFh 320000h-32FFFFh 330000h-33FFFFh 340000h-34FFFFh 350000h-35FFFFh 360000h-36FFFFh 370000h-37FFFFh 380000h-38FFFFh 390000h-39FFFFh 3A0000h-3AFFFFh 3B0000h-3BFFFFh 3C0000h-3CFFFFh 3D0000h-3DFFFFh 3E0000h-3EFFFFh 3F0000h-3FFFFFh 400000h-40FFFFh 410000h-41FFFFh 420000h-42FFFFh 430000h-43FFFFh 440000h-44FFFFh 450000h-45FFFFh 460000h-46FFFFh 470000h-47FFFFh (x16) Address Range 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh
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Sector Group 27 27 27 27 28 28 28 28 29 29 29 29 30 30 30 30 31 31 31 31 32 32 32 32 33 33 33 33 34 34 34 34 35 35 35 35 36 36 36 36 Sector Sector Address A21-A12 SA79 1001000xxx SA80 1001001xxx SA81 1001010xxx SA82 1001011xxx SA83 1001100xxx SA84 1001101xxx SA85 1001110xxx SA86 1001111xxx SA87 1010000xxx SA88 1010001xxx SA89 1010010xxx SA90 1010011xxx SA91 1010100xxx SA92 1010101xxx SA93 1010110xxx SA94 1010111xxx SA95 1011000xxx SA96 1011001xxx SA97 1011010xxx SA98 1011011xxx SA99 1011100xxx SA100 1011101xxx SA101 1011110xxx SA102 1011111xxx SA103 1100000xxx SA104 1100001xxx SA105 1100010xxx SA106 1100011xxx SA107 1100100xxx SA108 1100101xxx SA109 1100110xxx SA110 1100111xxx SA111 1101000xxx SA112 1101001xxx SA113 1101010xxx SA114 1101011xxx SA115 1101100xxx SA116 1101101xxx SA117 1101110xxx SA118 1101111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 480000h-48FFFFh 490000h-49FFFFh 4A0000h-4AFFFFh 4B0000h-4BFFFFh 4C0000h-4CFFFFh 4D0000h-4DFFFFh 4E0000h-4EFFFFh 4F0000h-4FFFFFh 500000h-50FFFFh 510000h-51FFFFh 520000h-52FFFFh 530000h-53FFFFh 540000h-54FFFFh 550000h-55FFFFh 560000h-56FFFFh 570000h-57FFFFh 580000h-58FFFFh 590000h-59FFFFh 5A0000h-5AFFFFh 5B0000h-5BFFFFh 5C0000h-5CFFFFh 5D0000h-5DFFFFh 5E0000h-5EFFFFh 5F0000h-5FFFFFh 600000h-60FFFFh 610000h-61FFFFh 620000h-62FFFFh 630000h-63FFFFh 640000h-64FFFFh 650000h-65FFFFh 660000h-66FFFFh 670000h-67FFFFh 680000h-68FFFFh 690000h-69FFFFh 6A0000h-6AFFFFh 6B0000h-6BFFFFh 6C0000h-6CFFFFh 6D0000h-6DFFFFh 6E0000h-6EFFFFh 6F0000h-6FFFFFh (x16) Address Range 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-267FFFh 268000h-26FFFFh 270000h-277FFFh 278000h-27FFFFh 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh 360000h-367FFFh 368000h-36FFFFh 370000h-377FFFh 378000h-37FFFFh
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Sector Group 37 37 37 37 38 38 38 38 39 39 39 39 40 40 40 40 Sector Sector Address A21-A12 SA119 1110000xxx SA120 1110001xxx SA121 1110010xxx SA122 1110011xxx SA123 1110100xxx SA124 1110101xxx SA125 1110110xxx SA126 1110111xxx SA127 1111000xxx SA128 1111001xxx SA129 1111010xxx SA130 1111011xxx SA131 1111100xxx SA132 1111101xxx SA133 1111110xxx SA134 1111111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 700000h-70FFFFh 710000h-71FFFFh 720000h-72FFFFh 730000h-73FFFFh 740000h-74FFFFh 750000h-75FFFFh 760000h-76FFFFh 770000h-77FFFFh 780000h-78FFFFh 790000h-79FFFFh 7A0000h-7AFFFFh 7B0000h-7BFFFFh 7C0000h-7CFFFFh 7D0000h-7DFFFFh 7E0000h-7EFFFFh 7F0000h-7FFFFFh (x16) Address Range 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3FFFFFh
Note:The address range is A20:A-1 in byte mode (BYTE=VIL) or A20:A0 in word mode (BYTE=VIH)
Bottom Boot Security Sector Addresses
Sector Address A21~A12 0000000000 Sector Size (bytes/words) 256/128 (x8) Address Range 000000h-0000FFh (x16) Address Range 000000-00007Fh
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Table 1 BUS OPERATION (1)
Operation Read Write (Program/Erase) Standby Output Disable Reset Sector Group Protect (Note 2) Chip unprotect (Note 2) Temporary Sector Group Unprotect Legend: L=Logic LOW=VIL, H=Logic High=VIH, VID=12.00.5V, X=Don't Care, AIN=Address IN, DIN=Data IN, DOUT=Data OUT Notes: 1. The sector group protect and chip unprotect functions may also be implemented via programming equipment. See the "Sector Group Protection and Chip Unprotect" section. 2. If WP=VIL, the two outermost boot sectors remain protected. If WP=VIH, the two outermost boot sector protection depends on whether they were last protected or unprotect using the method described in "Sector/ Sector Block Protection and Unprotect". 3. DIN or DOUT as required by command sequence, Data polling or sector protect algorithm (see Figure 2). X X X VID (Note 2) L H L VID (Note 2) CE L L VCC0.3V L X L OE L H X H X H WE H L X H X L RESET H H VCC0.3V H L VID WP L/H (Note 2) H L/H L/H L/H Address AIN AIN X X X Sector Addresses, A6=L, A1=H, A0=L Sector Addresses, A6=H, A1=H, A0=L AIN DIN DIN, DOUT Q15~Q0 DOUT DIN High-Z High-Z High-Z DIN, DOUT
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AUTOSELECT CODES (High Voltage Method)
Operation CE OE WE A0 A1 A5 to A2 Manufactures Code Read ID Device Code Device Code (Bottom Boot Block) Sector Protect Verify Secured Silicon Sector Indicator Bit (Q7) L L H H H X L X VID X X L L H X H X X X VID X SA Silicon (Top Boot Block) L L H H L X X X VID X X L L L L H H L H L L X X X X A6 A8 to A7 X X VID VID A9 A14 A15 to X X to X X XXC2H 22C9H (word) XXC9H (byte) 22CBH (word) XXCBH (byte) Code(1) xx88h (factory locked) xx08h (non-factory locked) Notes: 1.code=xx00h means unprotected, or code=xx01h means protected, SA=Sector Address, X=Don't care. A10 A21 Q0~Q15
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REQUIREMENTS FOR READING ARRAY DATA
To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered.
STANDBY MODE
MX29LV640T/B can be set into Standby mode with two different approaches. One is using both CE and RESET pins and the other one is using RESET pin only. When using both pins of CE and RESET, a CMOS Standby mode is achieved with both pins held at Vcc 0.3V. Under this condition, the current consumed is less than 0.2uA (typ.). If both of the CE and RESET are held at VIH, but not within the range of VCC 0.3V, the device will still be in the standby mode, but the standby current will be larger. During Auto Algorithm operation, Vcc active current (Icc2) is required even CE = "H" until the operation is completed. The device can be read with standard access time (tCE) from either of these standby modes. When using only RESET, a CMOS standby mode is achieved with RESET input held at Vss 0.3V, Under this condition the current is consumed less than 1uA (typ.). Once the RESET pin is taken high, the device is back to active without recovery delay. In the standby mode the outputs are in the high impedance state, independent of the OE input. MX29LV640T/B is capable to provide the Automatic Standby Mode to restrain power consumption during readout of data. This mode can be used effectively with an application requested low power consumption such as handy terminals. To active this mode, MX29LV640T/B automatically switch themselves to low power mode when MX29LV640T/B addresses remain stable during access time of tACC+30ns. It is not necessary to control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 0.2uA (CMOS level).
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory , the system must drive WE and CE to VIL, and OE to VIH. An erase operation can erase one sector, multiple sectors , or the entire device. Table indicates the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Writing specific address and data commands or sequences into the command register initiates device operations. Table 1 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. Section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the Automatic Select command sequence, the device enters the Automatic Select mode. The system can then read Automatic Select codes from the internal register (which is separate from the memory array) on Q7-Q0. Standard read cycle timings apply in this mode. Refer to the Automatic Select Mode and Automatic Select Command Sequence section for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification table and timing diagrams for write operations.
AUTOMATIC SLEEP MODE
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when address remain stable for tACC+30ns. The automatic sleep mode is independent of the CE, WE, and OE control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification.
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OUTPUT DISABLE
With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state. which are protected or unprotected at the same time. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 12V) A6 = VIL and CE = VIL. (see Table 2) Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated on the rising edge. Please refer to sector group protect algorithm and waveform. MX29LV640T/B also provides another method. Which requires VID on the RESET only. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor bus cycle timing. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 ( with CE and OE at VIL and WE at VIH). When A1=1, it will produce a logical "1" code at device output Q0 for a protected sector. Otherwise the device will produce 00H for the unprotected sector. In this mode, the addresses, except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer and device codes. (Read Silicon ID) It is also possible to determine if the group is protected in the system by writing a Read Silicon ID command. Performing a read operation with A1=VIH, it will produce a logical "1" at Q0 for the protected sector.
RESET OPERATION
The RESET pin provides a hardware method of resetting the device to reading array data. When the RESET pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity Current is reduced for the duration of the RESET pulse. When RESET is held at VSS0.3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS0.3V, the standby current will be greater. The RESET pin may be tied to system reset circuitry. A system reset would that also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET is asserted during a program or erase operation, the RY/BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY to determine whether the reset operation is complete. If RESET is asserted when a program or erase operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET pin returns to VIH. Refer to the AC Characteristics tables for RESET parameters and to Figure 14 for the timing diagram.
CHIP UNPROTECT OPERATION
The MX29LV640T/B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code. It is recommended to protect all sectors before activating chip unprotect mode. To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The CE pins must be set at VIL. Pins A6 must be set to VIH. (see Table 2) Refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. The unprotect mechanism begins on the falling edge of the WE pulse and is terminated on the rising edge. MX29LV640T/B also provides another method. Which requires VID on the RESET only. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor bus cycle timing.
SECTOR GROUP PROTECT OPERATION
The MX29LV640T/B features hardware sector group protection. This feature will disable both program and erase operations for these sector group protected. In this device, a sector group consists of four adjacent sectors
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It is also possible to determine if the chip is unprotect in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs (Q0-Q7) for an unprotect sector. It is noted that all sectors are unprotected after the chip unprotect algorithm is completed.
SILICON ID READ OPERATION
Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto address lines is not generally desired system design practice. MX29LV640T/B provides hardware method to access the silicon ID read operation. Which method requires VID on A9 pin, VIL on CE, OE, A6, and A1 pins. Which apply VIL on A0 pin, the device will output MXIC's manufacture code of C2H. Which apply VIH on A0 pin, the device will output MX29LV640T/B device code of C9H/CBH.
WRITE PROTECT (WP)
The write protect function provides a hardware method to protect boot sectors without using VID. If the system asserts VIL on the WP pin, the device disables program and erase functions in the two "outermost" 8 Kbyte boot sectors independently of whether those sectors were protected or unprotect using the method described in Sector/Sector Group Protection and Chip Unprotect". The two outermost 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured device. If the system asserts VIH on the WP pin, the device reverts to whether the two outermost 8K Byte boot sectors were last set to be protected or unprotect. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotect using the method described in "Sector/Sector Group Protection and Chip Unprotect". Note that the WP pin must not be left floating or unconnected; inconsistent behavior of the device may result.
VERIFY SECTOR GROUP PROTECT STATUS OPERATION
MX29LV640T/B provides hardware method for sector group protect status verify. Which method requires VID on A9 pin, VIH on WE and A1 pins, VIL on CE, OE, A6, and A0 pins, and sector address on A16 to A21 pins. Which the identified sector is protected, the device will output 01H. Which the identified sector is not protect, the device will output 00H.
DATA PROTECTION
The MX29LV640T/B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise.
TEMPORARY SECTOR GROUP UNPROTECT OPERATION
This feature allows temporary unprotect of previously protected sector to change data in-system. The Temporary Sector Unprotect mode is activated by setting the RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased as unprotect sector. Once VID is remove from the RESET pin, all the previously protected sectors are protected again.
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SECURED SILICON SECTOR
The MX29LV640T/B features a OTP memory region where the system may access through a command sequence to create a permanent part identification as so called Electronic Serial Number (ESN) in the device. Once this region is programmed, any further modification on the region is impossible. The secured silicon sector is a 128 words in length, and uses a Secured Silicon Sector Indicator Bit (Q7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevent duplication of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. The MX29LV640T/B offers the device with Secured Silicon Sector either factory locked or customer lockable. The factory-locked version is always protected when shipped from the factory , and has the Secured Silicon Sector Indicator Bit permanently set to a "1". The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to utilize that sector in any form they prefer. The customer-lockable version has the secured sector Indicator Bit permanently set to a "0". Therefore, the Secured Silicon Sector Indicator Bit prevents customer, lockable device from being used to replace devices that are factory locked. The system access the Secured Silicon Sector through a command sequence (refer to "Enter Secured Silicon/ Exit Secured Silicon Sector command Sequence). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the address normally occupied by the last sector SA134 (for MX29LV640T) or first sector SA0 (for MX29LV640B). Once entry the Secured Silicon Sector the operation of boot sectors is disabled but the operation of main sectors is as normally. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending command to sector SA0.
LOW VCC WRITE INHIBIT
When VCC is less than VLKO the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional write when VCC is greater than VLKO.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns (typical) on CE or WE will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one.
POWER-UP SEQUENCE
The MX29LV640T/B powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences.
POWER-UP WRITE INHIBIT
If WE=CE=VIL and OE=VIH during power up, the device does not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up.
POWER SUPPLY DE COUPLING
In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND.
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FACTORY LOCKED:Secured Silicon Sector Programmed and Protected At the Factory
In device with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. A factory locked device has an 8-word random ESN at address 3FFF70h-3FFF77h (for MX29LV640T) or 000000h-000007h (for MX29LV640B).
CUSTOMER LOCKABLE:Secured Silicon Sector NOT Programmed or Protected At the Factory
As an alternative to the factory-locked version, the device may be ordered such that the customer may program and protect the 128-word Secured Silicon Sector. Programming and protecting the Secured Silicon Sector must be used with caution since, once protected, there is no procedure available for unprotected the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. The Secured Silicon Sector area can be protected using one of the following procedures: Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET may be at either VIH or VID. This allows insystem protection of the Secured Silicon Sector without raising any device pin to a high voltage. Note that method is only applicable to the Secured Silicon Sector. Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then alternate method of sector protection described in the :Sector Group Protection and Unprotect" section. Once the Secured Silicon Sector is programmed, locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array.
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SOFTWARE COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 2 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Either of the two reset command sequences will reset the device (when applicable). All addresses are latched on the falling edge of WE or CE, whichever happens later. All data are latched on rising edge of WE or CE, whichever happens first.
TABLE 2. MX29LV640T/B COMMAND DEFINITIONS
First Bus Command Bus Cycle Second Bus Third Bus Cycle Cycle Fourth Bus Cycle Data Fifth Bus Cycle Sixth Bus Cycle
Cycles Addr Data Addr Data Addr Data Addr Read (Note 5) Reset (Note 6) Automatic Select (Note 7) Manufacturer ID Word Byte Device ID Word Byte Secured Sector Factory Protect (Note 9) Sector Group Protect Verify (Note 8) Enter Secured Silicon Sector Exit Secured Silicon Sector Program Word Byte Word Byte Word Byte Word Byte Word Byte Chip Erase Word Byte Sector Erase Word Byte CFI Query (Note 12) Word Byte Erase Suspend (Note 10) Erase Resume (Note 11) 4 4 4 4 4 4 4 4 3 3 4 4 4 4 6 6 6 6 1 1 1 1 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 55 AA BA BA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA AA 98 98 B0 30 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 90 90 90 90 90 90 90 90 88 88 90 90 A0 A0 80 80 80 80 XXX XXX PA PA 555 AAA 555 AAA X00 X00 X01 X02 X03 X06 1 1 RA XXX RD F0
Addr Data Addr Data
C2H C2H DDI
see note 9
(SA)X02 xx00/ (SA)X04 xx01
00 00 PD PD AA AA AA AA 2AA 55 555 55 555 10
AAA 10 SA SA 30 30
2AA 55 555 55
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Legend: X=Don't care RA=Address of the memory location to be read. RD=Data read from location RA during read operation. PA=Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE or CE pulse, whichever happen later. DDI=Data of device identifier C2H for manufacture code C9/CBH (Top/Bottom) for device code
PD=Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse. SA=Address of the sector to be erase or verified (in autoselect mode). Address bits A21-A12 uniquely select any sector.
Notes: 1. See Table 1 for descriptions of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or automatic select data, all bus cycles are write operation. 4. Address bits are don't care for unlock and command cycles, except when PA or SA is required. 5. No unlock or command cycles required when device is in read mode. 6. The Reset command is required to return to the read mode when the device is in the automatic select mode or if Q5 goes high. 7. The fourth cycle of the automatic select command sequence is a read cycle. 8. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. In the third cycle of the command sequence, address bit A21=0 to verify sectors 0~63, A21=1 to verify sectors 64~134 for Top Boot device. 9. The data is 88h for factory locked and 08h for not factory locked. 10.The system may read and program functions in non-erasing sectors, or enter the automatic select mode, when in the erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 11.The Erase Resume command is valid only during the Erase Suspend mode. 12.Command is valid when device is ready to read array data or when device is in automatic select mode.
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READING ARRAY DATA
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Automatic Program or Automatic Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or while in the automatic select mode. See the "Reset Command" section, next.
SILICON ID READ COMMAND SEQUENCE
The SILICON ID READ command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 2 shows the address and data requirements. This method is an alternative to that shown in Table 1, which is intended for PROM programmers and requires VID on address bit A9. The SILICON ID READ command sequence is initiated by writing two unlock cycles, followed by the SILICON ID READ command. The device then enters the SILICON ID READ mode, and the system may read at any address any number of times, without initiating another command sequence. A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the device code. A read cycle containing a sector address (SA) and the address 02h returns 01h if that sector is protected, or 00h if it is unprotected. Refer to Table for valid sector addresses. The system must write the reset command to exit the
RESET COMMAND
Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset command must be written to return to reading array data (also applies to SILICON ID READ during Erase Suspend). If Q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend).
automatic select mode and return to reading array data.
Byte/Word PROGRAM COMMAND SEQUENCE
The command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide fur ther controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 1 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using Q7, Q6, or RY/ BY. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte/Word Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across
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sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set Q5 to "1" ," or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1".
The MX29LV640T/B contains a Silicon-ID-Read operation to supplement traditional PROM programming methodology. The operation is initiated by writing the read silicon ID command sequence into the command register. Following the command write, a read cycle with A1=VIL,A0=VIL retrieves the manufacturer code of C2H. A read cycle with A1=VIL, A0=VIH returns the device code of 22C9H/22CBH for MX29LV640T/B.
SETUP AUTOMATIC CHIP/SECTOR ERASE
Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H, or the sector erase command 30H.
TABLE 3. SILICON ID CODE
Pins Manufacture code Device code for MX29LV640T Device code for MX29LV640B A0 A1 VIL VIL VIH VIL VIH VIL Q7 1 1 1 Q6 1 1 1 Q5 0 0 0 Q4 0 0 0 Q3 0 1 1 Q2 0 0 0 Q1 1 0 1 Q0 0 1 1 Code(Hex) C2H 22C9H (word) XXC9H (byte) 22CBH (word) XXCBH (byte)
AUTOMATIC CHIP/SECTOR ERASE COMMAND
The device does not require the system to preprogram prior to erase. The Automatic Erase algorithm automatically pre-program and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 2 shows the address and data requirements for the chip erase command sequence. Any commands written to the chip during the Automatic Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. The system can determine the status of the erase operation by using Q7, Q6, Q2, or RY/BY. See "Write Operation Status" for information on these status bits. When the Automatic Erase algorithm is complete, the device
returns to reading array data and addresses are no longer latched. Figure 3 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in "AC Characteristics" for parameters, and to Figure 16 for timing diagrams.
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SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Set-up Sector Erase command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations. When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic Sector Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE or CE, whichever happens later , while the command (data) is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE or CE, whichever happens later. Each successive sector load cycle started by the falling edge of WE or CE, whichever happens later must begin within 50us from the rising edge of the preceding WE or CE, whichever happens first. Otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase(30H) or Erase Suspend(B0H) during the time-out period resets the device to read mode. mand is issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase operation. However, When the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After this command has been executed, the command register will initiate erase suspend mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to the Erase Resume, program data to, or read data from any sector not selected for erasure. The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend program operation is complete, the system can once again read array data within non-suspended blocks.
ERASE RESUME
This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions. Another Erase Suspend command can be written after the chip has resumed erasing.
QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE
MX29LV640T/B is capable of operating in the CFI mode. This mode all the host system to determine the manufacturer of the device such as operating parameters and configuration. Two commands are required in CFI mode. Query command of CFI mode is placed first, then the Reset command exits CFI mode. These are described in Table 3. The single cycle Query command is valid only when the device is in the Read mode, including Erase Suspend, Standby mode, and Read ID mode; however, it is ignored otherwise. The Reset command exits from the CFI mode to the Read mode, or Erase Suspend mode, or read ID mode. The command is valid only when the device is in the CFI mode.
ERASE SUSPEND
This command only has meaning while the state machine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. When the Erase Suspend com-
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Table 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal) Description Query-unique ASCII string "QRY" Address h Address h (x16) (x8) 10 20 11 22 12 24 13 26 14 28 15 2A 16 2C 17 2E 18 30 19 32 1A 34 Data h 0051 0052 0059 0002 0000 0040 0000 0000 0000 0000 0000
Primary vendor command set and control interface ID code Address for primary algorithm extended query table Alternate vendor command set and control interface ID code (none) Address for secondary algorithm extended query table (none)
Table 4-2. CFI Mode: System Interface Data Values
Description VCC supply, minimum (2.7V) VCC supply, maximum (3.6V) VPP supply, minimum (none) VPP supply, maximum (none) Typical timeout for single word/byte write (2N us) Typical timeout for maximum size buffer write (2N us) Typical timeout for individual block erase (2N ms) Typical timeout for full chip erase (2N ms) Maximum timeout for single word/byte write times (2N X Typ) Maximum timeout for maximum size buffer write times (2N X Typ) Maximum timeout for individual block erase times (2N X Typ) Maximum timeout for full chip erase times (not supported) Address h Address h (x16) (x8) 1B 36 1C 38 1D 3A 1E 3C 1F 3E 20 40 21 42 22 44 23 46 24 48 25 4A 26 4C Data h 0027 0036 0000 0000 0004 0000 000A 0000 0005 0000 0004 0000
Table 4-3. CFI Mode: Device Geometry Data Values
Description Device size (2n bytes) Flash device interface code (02=asynchronous x8/x16) Maximum number of bytes in multi-byte write (not supported) Address h Address h (x16) (x8) 27 4E 28 50 29 52 2A 54 2B 56 Data h 0017 0002 0000 0000 0000
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Number of erase block regions Erase block region 1 information [2E,2D] = # of blocks in region -1 [30, 2F] = size in multiples of 256-bytes 2C 2D 2E 2F 30 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch 58 5A 5C 5E 60 62 64 66 68 6A 6C 6E 70 72 74 76 78 0002 0007 0000 0020 0000 007Eh 0000h 0000h 0001h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
Description Query-unique ASCII string "PRI" Address h Address h (x16) (x8) 40 80 41 82 42 84 43 86 44 88 45 8A 46 8C 47 8E 48 90 49 92 4A 94 4B 96 4C 98 4Dh 9A 4Eh 4Fh 9C 9E Data h 0050 0052 0049 0031 0031 0000 0002 0004 0001 0004 0000 0000 0000 00h 00h 0002h/ 0003h
Major version number, ASCII Minor version number, ASCII Address sensitive unlock (0=required, 1= not required) Erase suspend (2= to read and write) Sector protect (N= # of sectors/group) Temporary sector unprotect (1=supported) Sector protect/unprotect scheme Simultaneous R/W operation (0=not supported) Burst mode type (0=not supported) Page mode type (0=not supported) ACC (Acceleration) Supply Minimum 00h=Not Supported, D7-D4: Volt, D3-D0:100mV ACC (Acceleration) Supply Maximum 00h=Not Supported, D7-D4: Volt, D3-D0:100mV Top/Bottom Boot Sector Flag 02h=Bottom Boot Device, 03h=Top Boot Device
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WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/BY. Table 10 and the following subsections describe the functions of these bits. Q7, RY/BY, and Q6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first.
Table 5. Write Operation Status
Status Byte/Word Program in Auto Program Algorithm Auto Erase Algorithm Erase Suspend Read (Erase Suspended Sector) In Progress Erase Suspended Mode Erase Suspend Read Data (Non-Erase Suspended Sector) Erase Suspend Program Byte/Word Program in Auto Program Algorithm Exceeded Time Limits Auto Erase Algorithm Erase Suspend Program Q7 Q7 0 Q7 Data Toggle Toggle Toggle Toggle Data 0 1 1 1 Data Data N/A N/A 1 N/A N/A No Toggle Toggle N/A 1 0 0 0 0 Q7 Note1 Q7 0 1 Q6 Toggle Toggle No Toggle Q5 Note2 0 0 0 Q3 N/A 1 Q2 No Toggle Toggle RY/BY 0 0 1
N/A Toggle
Notes: 1. Performing successive read operations from the erase-suspended sector will cause Q2 to toggle. 2. Performing successive read operations from any address will cause Q6 to toggle. 3. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the Q2 bit. However, successive reads from the erase-suspended sector will cause Q2 to toggle.
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Q7: Data Polling
The Data Polling bit, Q7, indicates to the host system whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence. During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed to Q7. This Q7 status also applies to programming during Erase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data. During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is analogous to the complement/true datum output described for the Automatic Program algorithm: the erase function changes all the bits in a sector to "1" prior to this, the device outputs the "complement," or "0"." The system must provide an address within any of the sectors selected for erasure to read valid status information on Q7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on Q7 is active for approximately 100 us, then the device returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects Q7 has changed from the complement to true data, it can read valid data at Q7-Q0 on the following read cycles. This is because Q7 may change asynchronously with Q0-Q6 while Output Enable (OE) is asserted low. after the rising edge of the final WE or CE, whichever happens first pulse in the command sequence (prior to the program or erase operation), and during the sector time-out. During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6 to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles for 100us and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use Q6 and Q2 together to determine whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. When the device enters the Erase Suspend mode, Q6 stops toggling. However, the system must also use Q2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7. If a program address falls within a protected sector, Q6 toggles for approximately 2us after the program command sequence is written, then returns to reading array data. Q6 also toggles during the erase-suspend-program mode, and stops toggling once the Automatic Program algorithm is complete. Table 4 shows the outputs for Toggle Bit I on Q6.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively erasing (that is, the Automatic Erase algorithm is in process), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE or CE, whichever happens first pulse in the command sequence. Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid
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cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sectors and mode information. Refer to Table 4 to compare outputs for Q2 and Q6. only operating functions of the device under this condition. If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. If this time-out condition occurs during the byte/word programming operation, it specifies that the entire sector containing that byte is bad and this sector may not be reused, (other sectors are still functional and can be reused). The time-out condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never completes the Automatic Algorithm operation. Hence, the system never reads a valid data on Q7 bit and Q6 never stops toggling. Once the Device has exceeded timing limits, the Q5 bit will indicate a "1". Please note that this is not a device failure condition since the device was incorrectly used. The Q5 failure condition may appear if the system tries to program a to a "1" location that is previously programmed to "0". Only an erase operation can change a "0" back to a "1"." Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, Q5 produces a "1".
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high. The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation.
Q3:Sector Erase Timer
After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is
Q5:Program/Erase Timing
Q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the
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still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted. If the time between additional erase commands from the system can be less than 50us, the system need not to monitor Q3.
RY/BY:READY/BUSY OUTPUT
The RY/BY is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE pulse in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to VCC . If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode.
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ABSOLUTE MAXIMUM RATINGS
Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC Ambient Temperature with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V A9, OE, and RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 7. 2. Minimum DC input voltage on pins A9, OE, and RESET is -0.5 V. During voltage transitions, A9, OE, and RESET may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING RATINGS
Commercial (C) Devices Ambient Temperature (TA ). . . . . . . . . . . . 0C to +70 C Industrial (I) Devices C Ambient Temperature (TA ). . . . . . . . . . -40 to +85C VCC Supply Voltages VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
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DC CHARACTERISTICS
Parameter Description I LI
C C, TA=-40 to 85 VCC=2.7V~3.6V
Test Conditions VIN = VSS to VCC , VCC = VCC max
Min
Typ
Max 1.0
Unit uA
Input Load Current (Note 1)
I LIT I LO
A9 Input Leakage Current Output Leakage Current
VCC=VCC max; A9 = 12.5V VOUT = VSS to VCC , VCC= VCC max
35 1.0
uA uA
ICC1 VCC Active Read Current (Notes 2,3) ICC2 VCC Active Write Current (Notes 2,4,6) ICC3 VCC Standby Current (Note 2) ICC4 VCC Reset Current (Note 2) ICC5 Automatic Sleep Mode (Note 2,5)
CE= VIL, OE = VIH
5 MHz 1 MHz
9 2 26
16 4 30
mA mA mA
CE= V IL , OE = V IH
CE,RESET=VCC0.3V WP=VIH RESET=VSS0.3V WP=VIH VIL = V SS 0.3 V, VIH = VCC 0.3 V, WP=VIH
0.2
15
uA
0.2
15
uA
0.2
15
uA
VIL VIH VID
Input Low Voltage Input High Voltage Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.0 V 10%
-0.5 0.7xVcc 11.5
0.8 Vcc+0.3 12.5
V V V
VOL
Output Low Voltage
IOL= 4.0mA,VCC=VCC min IOH=-2.0mA,VCC=VCC min IOH=-100uA,VCC=VCC min 0.85VCC VCC-0.4 1.5
0.45
V V V V
VOH1 Output High Voltage VOH2 VLKO Low VCC Lock-Out Voltage (Note 4)
Notes: 1. On the WP pin only, the maximum input load current when WP = VIL is 5.0uA 2. Maximum ICC specifications are tested with VCC = VCC max. 3. The ICC current listed is typically is less than 2 mA/MHz, with OE at VIH . Typical specifications are for VCC = 3.0V. 4. ICC active while Embedded Erase or Embedded Program is in progress. 5. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC + 30 ns. Typical sleep mode current is 200 nA. 6. Not 100% tested.
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SWITCHING TEST CIRCUITS TEST SPECIFICATIONS
Test Condition 90 120 Output Load 1 TTL gate Output Load Capacitance, CL 30 100 (including jig capacitance) Input Rise and Fall Times 5 Input Pulse Levels 0.0-3.0 Input timing measurement 1.5 reference levels Output timing measurement 1.5 reference levels Unit pF ns V V V
DEVICE UNDER TEST
2.7K ohm 3.3V
CL
6.2K ohm
DIODES=IN3064 OR EQUIVALENT
KEY TO SWITCHING WAVEFORMS
WAVEFORM INPUTS Steady Changing from H to L Changing from L to H Don't Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State(High Z) OUTPUTS
SWITCHING TEST WAVEFORMS
3.0V
1.5V
Measurement Level
1.5V OUTPUT
0.0V INPUT
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AC CHARACTERISTICS Read-Only Operations
Parameter Std. tRC tACC tCE tOE tDF tDF tOH Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Output Hold Time From Address, CE or OE, whichever Occurs First Read tOEH Output Enable Hold Time (Note 1) Toggle and Data Polling Min Min 0 10 ns ns CE, OE=VIL OE=VIL Test Setup Min Max Max Max Max Max Min
TA=-40 to 85 VCC=2.7V~3.6V C C,
Speed Options 90 90 90 90 35 30 30 0 120 120 120 120 50 30 30 Unit ns ns ns ns ns ns ns
Notes: 1. Not 100% tested. 2. See SWITCHING TEST CIRCUITS and TEST SPECIFICATIONS TABLE for test specifications.
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Fig 1. COMMAND WRITE OPERATION
VCC
5V
Addresses
VIH
ADD Valid
VIL tAS tAH
WE
VIH VIL tOES tWPH tCWC
tWP
CE
VIH VIL tCS tCH
OE
VIH VIL VIH tDS tDH
Data
VIL
DIN
READ/RESET OPERATION Fig 2. READ TIMING WAVEFORMS
tRC VIH
Addresses
VIL
ADD Valid
tCE VIH
CE
VIL tRH tRH VIH
WE
VIL VIH VIL tOH tOEH tOE tDF
OE
tACC
Outputs
VOH VOL VIH
HIGH Z
DATA Valid
HIGH Z
RESET
VIL
RY/BY
0V
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AC CHARACTERISTICS
Parameter tREADY1 tREADY2 tRP tRH tRB tRPD Description RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) RESET Pulse Width (NOT During Automatic Algorithms) RESET High Time Before Read(See Note) RY/BY Recovery Time(to CE, OE go low) RESET Low to Standby Mode MIN MIN MIN MIN 500 50 0 20 ns ns ns us MAX 500 ns Test Setup All Speed Options Unit MAX 20 us
Note:Not 100% tested
Fig 3. RESET TIMING WAVEFORM
RY/BY
CE, OE
tRH
RESET
tRP tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
tRB
CE, OE
RESET
tRP
Reset Timing during Automatic Algorithms
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ERASE/PROGRAM OPERATION Fig 4. AUTOMATIC CHIP/SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC tAS
Read Status Data
Address
2AAh
SA
555h for chip erase tAH
VA
VA
CE
tCH
OE
tWP
tWHWH2
WE
tCS tDS tDH
tWPH
55h Data
30h
10 for Chip Erase
In Progress Complete
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES: 1.SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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Fig 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Poll from system YES
No
DATA = FFh ?
YES
Auto Erase Completed
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Fig 6. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Last Sector to Erase ?
NO
YES Data Poll from System
NO Data=FFh? YES
Auto Sector Erase Completed
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Fig 7. ERASE SUSPEND/RESUME FLOWCHART
START
Write Data B0H
NO Toggle Bit checking Q6 not toggled YES Read Array or Program
ERASE SUSPEND
Reading or Programming End YES Write Data 30H
NO
ERASE RESUME Continue Erase
Another Erase Suspend ? YES
NO
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Fig 8. SECURED SILICON SECTOR PROTECTED ALGORITHMS FLOWCHART
START
Enter Secured Silicon Sector
Wait 1us
First Wait Cycle Data=60h
Second Wait Cycle Data=60h A6=0, A1=1, A0=0
Wait 300us
No
Data = 01h ?
Yes
Device Failed Write Reset Command
Secured Sector Protect Complete
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AC CHARACTERISTICS Erase and Program Operations
Parameter Std. tWC tAS tASO tAH tAHT tDS tDH tOEPH tGHWL tGHEL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY Description Write Cycle Time (Note 1) Address Setup Time Address Setup Time to OE low during toggle bit polling Address Hold Time Address Hold Time From CE or OE high during toggle bit polling Data Setup Time Data Hold Time Output Enable High during toggle bit polling Read Recovery Time Before Write (OE High to WE Low) Read Recovery Time Before Write CE Setup Time CE Hold Time Write Pulse Width Write Pulse Width High Programming Operation Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Write Recovery Time from RY/BY Program/Erase Valid to RY/BY Delay Byte Word Min Min Min Min Min Typ Typ Typ Min Min Min 35 30 9 11 1.6 50 0 90 0 0 0 50 ns ns ns ns ns us us sec us ns ns Min Min Min Min 45 0 20 0 50 ns ns ns ns Min Min Min Min Min 45 0
TA=-40 to 85 VCC=2.7V~3.6V C C,
Speed Options 90 90 0 15 50 120 120 Unit ns ns ns ns ns
Notes: 1. Not 100% tested. 2. See the "Erase And Programming Performance" section for more information.
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Fig 9. AUTOMATIC PROGRAM TIMING WAVEFORMS
Program Command Sequence(last two cycle)
tWC tAS
Read Status Data (last two cycle)
Address
XXXh
PA
tAH
PA
PA
CE
tCH
OE
tWP
tWHWH1
WE
tCS tDS tDH
tWPH
A0h Data
PD
Status
DOUT
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES: 1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
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AC CHARACTERISTICS Alternate CE Controlled Erase and Program Operations
Parameter Std. tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE High to WE Low) WE Setup Time WE Hold Time CE Pulse Width CE Pulse Width High Programming Operation Sector Erase Operation (Note 2) Byte Word Min Min Min Min Typ Typ Typ 45 30 9 11 1.6 0 0 50 ns ns ns ns us us sec Min Min Min Min Min Min 45 45 0 0 Speed Options 90 90 0 50 50 120 120 Unit ns ns ns ns ns ns
Notes: 1. Not 100% tested. 2. See the "Erase And Programming Performance" section for more information.
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Fig 10. CE CONTROLLED PROGRAM TIMING WAVEFORM
PA for program SA for sector erase 555 for chip erase
555 for program 2AA for erase
Data Polling Address
tWC tWH tAS tAH
PA
WE
tGHEL
OE
tCP tWHWH1 or 2
CE
tWS tDS tDH
tCPH tBUSY
Q7 DOUT Data
tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase
RESET
RY/BY
NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device. 2.Figure indicates the last two bus cycles of the command sequence.
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Fig 11. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Increment Address
Data Poll from system
No Verify Word Ok ?
YES
No Last Address ?
YES
Auto Program Completed
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SECTOR GROUP PROTECT/CHIP UNPROTECT Fig 12. Sector Group Protect / Chip Unprotect Waveform (RESET Control)
VID VIH
RESET
SA, A6 A1, A0
Valid*
Valid*
Valid*
Sector Group Protect or Chip Unprotect Data
1us
Verify 40h Status
60h
60h
Sector Group Protect:150us Chip Unprotect:15ms
CE
WE
OE
Note: For sector group protect A6=0, A1=1, A0=0. For chip unprotect A6=1, A1=1, A0=0
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Fig 13. IN-SYSTEM SECTOR GROUP PROTECT/CHIP UNPROTECT ALGORITHMS WITH RESET=VID
START START PLSCNT=1 Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address
PLSCNT=1
RESET=VID
RESET=VID
Wait 1us
Wait 1us
Temporary Sector Unprotect Mode
No
First Write Cycle=60h? Yes Set up sector address No Sector Protect: Write 60h to sector address with A6=0, A1=1, A0=0
First Write Cycle=60h? Yes
No
Temporary Sector Unprotect Mode
All sectors protected? Yes Set up first sector address
Wait 150us
Verify Sector Protect: Write 40h to sector address with A6=0, A1=1, A0=0 Increment PLSCNT Read from sector address with A6=0, A1=1, A0=0 No
Reset PLSCNT=1
Sector Unprotect: Write 60h to sector address with A6=1, A1=1, A0=0
Wait 15 ms
Increment PLSCNT No PLSCNT=25? Data=01h?
Verify Sector Unprotect: Write 40h to sector address with A6=1, A1=1, A0=0 Read from sector address with A6=1, A1=1, A0=0
Yes Device failed
Yes No Protect another sector? Yes No PLSCNT=1000?
Reset PLSCNT=1 Data=00h?
Sector Protect Algorithm
No Remove VID from RESET Yes Device failed Write reset command Last sector verified? No Yes
Sector Protect complete
Chip Unprotect Algorithm
Yes Remove VID from RESET
Write reset command
Sector Unprotect complete
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AC CHARACTERISTICS
Parameter tVLHT tWPP1 tOESP Description Voltage transition time Write pulse width for sector group protect OE setup time to WE active Test Setup Min. Min. Min. All Speed Options 4 100 4 Unit us ns us
Fig 14. SECTOR GROUP PROTECT TIMING WAVEFORM (A9, OE Control)
A1
A6
12V 3V A9
tVLHT Verify
12V 3V OE
tVLHT tWPP 1 tVLHT
WE
tOESP
CE
Data
tOE
01H
F0H
A21-A16
Sector Address
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Fig 15. SECTOR GROUP PROTECTION ALGORITHM (A9, OE Control)
START
Set Up Sector Addr
PLSCNT=1
OE=VID,A9=VID,CE=VIL A6=VIL
Activate WE Pulse
Time Out 150us
Set WE=VIH, CE=OE=VIL A9 should remain VID
.
No
Read from Sector Addr=SA, A1=1
PLSCNT=32?
No
Data=01H?
Yes Device Failed
Protect Another Sector?
Yes
Remove VID from A9 Write Reset Command
Sector Protection Complete
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Fig 16. CHIP UNPROTECT TIMING WAVEFORM (A9, OE Control)
A1
12V 3V A9
tVLHT
A6
Verify
12V 3V OE
tVLHT tWPP 2 tVLHT
WE
tOESP
CE
Data
tOE
00H
F0H
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Fig 17. CHIP UNPROTECT FLOWCHART (A9, OE Control)
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID CE=VIL,A6=1
Activate WE Pulse
Time Out 15ms
Increment PLSCNT
Set OE=CE=VIL A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device No
Increment Sector Addr
Data=00H?
No
PLSCNT=1000?
Yes No
Yes Device Failed
All sectors have been verified? Yes Remove VID from A9 Write Reset Command
Chip Unprotect Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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AC CHARACTERISTICS
Parameter tVIDR tRSP tRRB Description VID Rise and Fall Time (see Note) RESET Setup Time for Temporary Sector Unprotect RESET Hold Time from RY/BY High for Temporary Sector Group Unprotect Test Setup Min Min Min 500 4 4 ns us us All Speed Options Unit
Fig 18. TEMPORARY SECTOR GROUP UNPROTECT WAVEFORMS
12V
RESET
0 or 3V VIL or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE
WE
tRSP tRRB
RY/BY
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Fig 19. TEMPORARY SECTOR GROUP UNPROTECT FLOWCHART
Start
RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected. VID=11.5V~12.5V 2. All previously protected sectors are protected again.
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Fig 20. SILICON ID READ TIMING WAVEFORM
VCC
3V VID VIH VIL
VIH VIL tACC tACC
ADD A9
ADD A0 A1
VIH VIL
VIH
ADD
VIL
CE
VIH VIL
WE
VIH VIL
tCE
OE
VIH VIL
tOE tDF tOH tOH
VIH
DATA Q0-Q15
DATA OUT
VIL
DATA OUT 22C9H for Top 22CBH for Bottom
00C2H
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WRITE OPERATION STATUS Fig 21. DATA POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
tRC
Address
VA
tACC tCE
VA
VA
CE
tCH tOE
OE
tOEH tDF
WE
tOH
Q7 Q0-Q6
tBUSY
Status Data
Complement
True
Valid Data
High Z
Status Data
Status Data
True
Valid Data
High Z
RY/BY
NOTES: VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data raed cycle.
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Fig 22. DATA POLLING ALGORITHM
Start
Read Q7~Q0 Add.=VA(1)
Q7 = Data ?
Yes
No No
Q5 = 1 ?
Yes Read Q7~Q0 Add.=VA
Q7 = Data ? (2) No FAIL
Yes
Pass
Notes: 1.VA=valid address for programming. 2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5.
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Fig 23. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
tRC
Address
VA
tACC tCE
VA
VA
VA
CE
tCH tOE
OE
tOEH tDF
WE
tDH tOH
Q6/Q2
Valid Status
Valid Status (first read)
Valid Status (second read)
Valid Data (stops toggling)
Valid Data
RY/BY
NOTES: VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle.
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Fig 24. TOGGLE BIT ALGORITHM
START
Read Q7~Q0
Read Q7~Q0
(Note 1)
Toggle Bit Q6 =Toggle? YES
NO
NO Q5=1?
YES Read Q7~Q0 Twice (Note 1,2)
Toggle Bit Q6= Toggle? YES Program/Erase Operation Not Complete, Write Reset Command
Program/Erase Operation Complete
Note: 1. Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 changes to "1".
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Fig 25. Q6 versus Q2
Enter Embedded Erasing Erase Suspend Erase Erase Suspend Read Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Erase Complete
WE
Q6
Q2
NOTES: The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
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ERASE AND PROGRAMMING PERFORMANCE (1)
LIMITS PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode Word Mode Erase/Program Cycles Note: 100,000 MIN. TYP.(2) 0.9 45 9 11 50 45 MAX. 15 65 300 360 160 140 UNITS sec sec us us sec sec Cycles
1. Not 100% Tested, Excludes external system level over head. 2. Typical program and erase times assume the following condition= 25C,3.0V VCC. Additionally, programming typicals assume checkerboard pattern.
LATCH-UP CHARACTERISTICS
MIN. Input Voltage with respect to GND on all pins except I/O pins Input Voltage with respect to GND on all I/O pins Current Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time. -1.0V -1.0V -100mA MAX. 13.5V Vcc + 1.0V +100mA
TSOP PIN CAPACITANCE
Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Set VIN=0 VOUT=0 VIN=0 TYP 6 8.5 7.5 MAX 7.5 12 9 UNIT pF pF pF
Notes: 1. Sampled, not 100% tested. 2. Test conditions TA=25C, f=1.0MHz
DATA RETENTION
Parameter Minimum Pattern Data Retention Time Test Conditions 150 125
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Min 10 20
Unit Years Years
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ORDERING INFORMATION
PLASTIC PACKAGE PART NO. MX29LV640TTC-90 MX29LV640TTC-12 MX29LV640BTC-90 MX29LV640BTC-12 MX29LV640TTI-90 MX29LV640TTI-12 MX29LV640BTI-90 MX29LV640BTI-12 MX29LV640TXBC-90 MX29LV640TXBC-12 MX29LV640BXBC-90 MX29LV640BXBC-12 MX29LV640TXBI-90 MX29LV640TXBI-12 MX29LV640BXBI-90 MX29LV640BXBI-12 MX29LV640TXEC-90 MX29LV640TXEC-12 MX29LV640BXEC-90 MX29LV640BXEC-12 MX29LV640TXEI-90 MX29LV640TXEI-12 MX29LV640BXEI-90 MX29LV640BXEI-12 MX29LV640TXCC-90 MX29LV640TXCC-12 MX29LV640BXCC-90 MX29LV640BXCC-12 MX29LV640TXCI-90 MX29LV640TXCI-12 MX29LV640BXCI-90 MX29LV640BXCI-12
P/N:PM0920
ACCESS TIME (ns) 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120 90 120
Ball Pitch/ Ball size
PACKAGE 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 63 Ball CSP 64 Ball CSP 64 Ball CSP 64 Ball CSP 64 Ball CSP 64 Ball CSP 64 Ball CSP 64 Ball CSP 64 Ball CSP
Remark
0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.3mm 0.8mm/0.4mm 0.8mm/0.4mm 0.8mm/0.4mm 0.8mm/0.4mm 0.8mm/0.4mm 0.8mm/0.4mm 0.8mm/0.4mm 0.8mm/0.4mm 1mm/0.4mm 1mm/0.4mm 1mm/0.4mm 1mm/0.4mm 1mm/0.4mm 1mm/0.4mm 1mm/0.4mm 1mm/0.4mm
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PART NO. MX29LV640TTC-90G MX29LV640TTC-12G MX29LV640BTC-90G MX29LV640BTC-12G MX29LV640TTI-90G MX29LV640TTI-12G MX29LV640BTI-90G MX29LV640BTI-12G ACCESS TIME (ns) 90 120 90 120 90 120 90 120 Ball Pitch/ Ball size PACKAGE 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) Remark PB-free PB-free PB-free PB-free PB-free PB-free PB-free PB-free
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PACKAGE INFORMATION
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REVISION HISTORY
Revision No. Description 1.0 1. To modified the max. ICC current from 5uA to 15uA 2. To added 63CSP with 0.4mm ball size package information 1.1 1. To corrected CFI code in table 4-3 device geometry data values 2. To added pb-free part no. for 48-TSOP package 1.2 1. Removed "Preliminary" from title Page P33 P63,66 P27 P64 P1 Date JUL/22/2003 OCT/28/2003 NOV/05/2003
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MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688 FAX:+886-3-563-2888
EUROPE OFFICE:
TEL:+32-2-456-8020 FAX:+32-2-456-8021
JAPAN OFFICE:
TEL:+81-44-246-9100 FAX:+81-44-246-9105
SINGAPORE OFFICE:
TEL:+65-348-8385 FAX:+65-348-8096
TAIPEI OFFICE:
TEL:+886-2-2509-3300 FAX:+886-2-2509-2200
MACRONIX AMERICA, INC.
TEL:+1-408-453-8088 FAX:+1-408-453-8488
CHICAGO OFFICE:
TEL:+1-847-963-1900 FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.

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